Document Details

Document Type : Article In Journal 
Document Title :
Thermal Study of Gallium Nitride - Metal Contact
دراسة حرارية لشريحة من مادة نتريد الجاليوم الملتصقة بمعدن
 
Subject : Physics 
Document Language : English 
Abstract : GaN films are prepared by MOCVD method on a sapphire substrate. The sample is n-type an semiconductor of 0.5 µm thickness and carriers concentration 2.2 × 1019cm–3 .Metal contacts are prepared by evaporation of metals on GaN films. I-V characteristics are carried out under vacuum in the temperature rang from 90 to 300 K. There is a departure from the nonlinear behavior of the current to a linear one as temperature increases due to the sample series resistance. The saturation current is found to be 8.3 × 10–7 A at room temperature; then, it increases with temperature. At room temperature, the barrier height at zero- bias and the flat band barrier height are calculated at different temperature and they are found to be 0.66 eV and 0.86 eV, respectively. Moreover, the ideality factor has been calculated at different temperature; it, increases with decreasing temperature and it is equal to 1.26 at room temperature. The serial resistant is found to be to 64 Ω at room temperature. 
ISSN : 1012-1319 
Journal Name : Science Journal 
Volume : 21 
Issue Number : 2 
Publishing Year : 1430 AH
2009 AD
 
Article Type : Article 
Added Date : Monday, November 16, 2009 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
سعيد سعد الأميرAl-Ameer, Saeed S.ResearcherDoctoratessaameer@yahoo.com

Files

File NameTypeDescription
 24468.pdf pdf 

Back To Researches Page