Document Details

Document Type : Article In Journal 
Document Title :
Carrier Transport Mechanisms of p-CuPc / n-Si Heterojunction
ميكانيكية حاملات الشحنة في وصلات متغايرة من فيثالوسيانين النحاس / السيليكون
 
Subject : Physics 
Document Language : English 
Abstract : p-CuPc / n-Si heterojunction cells have been fabricated by thermal evaporation of p-type CuPc thin films onto n-Si < 100 > single crystal wafers. Current – Voltage and Capacitance – Voltage measurements have been performed to determine some electrical properties of these structures. Rectifying properties have been obtained, which are definitely of the diode type. The analysis of dark Current – Voltage characteristics of cells under test at several temperatures reveals some junction parameters such as: rectification ratio, the series resistance, the shunt resistance, the diode ideality factor, the potential barrier height and the reverse activation energy. The forward current involves thermionic emission as well as space charge limited current at low and high forward bias voltages respectively. The reverse current is probably limited by generation – recombination mechanism. The dark Capacitance – Voltage behavior indicates an abrupt heterojunction, with homogeneous distribution of impurities inside the space charge region. Values of conversion efficiency as high as 1.29 % and open voltage of 0.36 V were evaluated from the loaded I-V characteristics at input power of 50mW/cm2. 
ISSN : 1012-1319 
Journal Name : Science Journal 
Volume : 20 
Issue Number : 2 
Publishing Year : 1429 AH
2008 AD 
Number Of Pages : 12 
Article Type : Article 
Added Date : Sunday, October 11, 2009 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
فاطمة سالم باهبريF. S. BahabriResearcher  

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