Document Details

Document Type : Article In Journal 
Document Title :
Studying the Electrical Resistivity of Heavily-Doped n-Type Silicon Using a Gradient Expansion of the Potential
دراسة المقاومة لمادة السليكون ذات شوائب متعادلة باستخدام مفكوك تدريجي للجهد
 
Subject : Physics 
Document Language : English 
Abstract : We calculate the electrical resistivity of heavily doped n type silicon of low temperature by deriving a donor ion potential,Eqn. (6), which has the form ?? ( r)?0[1+ ? (1/r+1/Rq)2+?]?? This potential together with the trail function is used to obtain the parameters of the zeroth-order-partial-wave shift ?0, and the first order particle-wave shift ?1, which are used to obtain the total cross section of the elastic scattering of a conduction electron. The relaxation time and the resistivity are calculated. The results are compared to that where the donor-ion potential suggested by Dingle and Csavinszky is used. It is shown that the parameter of the second term in the gradient expansion of the potential is less than 1/8. We used the variation principle and the Born approximation in our calculations.  
ISSN : 1012-1319 
Journal Name : Science Journal 
Volume : 15 
Issue Number : 1 
Publishing Year : 1423 AH
2003 AD 
Number Of Pages : 7 
Article Type : Article 
Added Date : Sunday, October 11, 2009 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
عويش حربي الغامدي OWAISH H. AlGhamdiResearcher  
محمد رياض عرفةMOHAMMED R. ARAFAHResearcher  

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