Document Details

Document Type : Article In Journal 
Document Title :
Thermoelectric Power of Layered Chalcogenides GaTe Crystals
القدرة الكهروحرارية للمركب التشالكوجينيدي الطبقي جاليوم تيلرايد
 
Subject : Physics 
Document Language : English 
Abstract : Thermoelectric power (TEP) measurements of Gallium mono-telluride single crystals have been studied over the temperature range 193-583K. GaTe single crystals grown from melt by the modified Bridgman technique. The results of measurements indicate that the investigated samples turned out to be p-type nature. Investigation of GaTe compound revealed that it has interesting properties. Many physical parameters were determined such as carrier mobilities, effective masses of free charge carriers, diffusion coefficient and diffusion length as well as the relaxation time. The highest value of figure of merit for GaTe permits the practical application as thermoelectric element. 
ISSN : 1012-1319 
Journal Name : Science Journal 
Volume : 19 
Issue Number : 1 
Publishing Year : 1428 AH
2007 AD 
Number Of Pages : 8 
Article Type : Article 
Added Date : Sunday, October 11, 2009 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
احمد عبدالله الغامديA. A. Al-GhamdiResearcher  

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