Document Details

Document Type : Article In Journal 
Document Title :
Study and Characterization ofa New Trapezoidal Channel MOSFET for Negative Resistance Applications
دراسة ونمذجة وصلة كهربائية من الـ MOSFET لاستخدامها في التطبيقات المتعلقة بالمقاومات الكهربائية السالبة
 
Subject : physics 
Document Language : English 
Abstract : MOSFET transistors may be fabricated with a variety of gate geometries. The trapezoidal shape provides a new interesting one. If this nonstandard geometry is made dependent on the biasing conditions, original behaviour and new I- V characteristics are expected to be obtained. This paper presents a study and characterization of this new device and shows that it provides a voltage controlled negative resistance. It is seen to have many noticeable advantages over those devices which are already known.. 
ISSN : 1012-1319 
Journal Name : Science Journal 
Volume : 8 
Issue Number : 1 
Publishing Year : 1416 AH
1996 AD 
Number Of Pages : 11 
Article Type : Article 
Added Date : Sunday, October 11, 2009 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
فهد المرزوقي FAHAD AL-MARZOUKIResearcher  
عادل الحناوي ADEL EL-HENNAWYResearcher  
سعيد احمد الغامديSAID AL-GHAMDIResearcher  

Files

File NameTypeDescription
 22585.pdf pdf 

Back To Researches Page