Document Details

Document Type : Article In Journal 
Document Title :
I-V Characteristics of III-V Compounds (GAAS) for MOSFET Devices
MOSFET لمادة الجاليومارسنيد المستخدم لوصلت الـ( III-V )علاقة التيار بالجهد للمركبات
 
Subject : Physics 
Document Language : English 
Abstract : A new approach of examining and characterizing both thin film or thin film based devices are described in this paper. Justification of the selected techniques which have been utilized in fabricating these thin films are given. The important aspect of selecting the substrates on which the thin films are made were pointed out. The measurement techniques which have been adopted here are discussed. Results and discussion show the ability, reliability and simplicity of these proposed techniques. The results are interesting and confirm the method used to produce them, even though it is an oil pumped system. 
ISSN : 1012-1319 
Journal Name : Science Journal 
Volume : 10 
Issue Number : 1 
Publishing Year : 1418 AH
1998 AD 
Number Of Pages : 10 
Article Type : Article 
Added Date : Sunday, October 11, 2009 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
سعيد سعد الاميرS. S. AL-AMEERResearcher  
فهد مسعود المرزوقيF. ALMARZOUKIResearcher  

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