Main Page
Welcome
About the Center
About The SPC
Mission and Vision
Organizational Structure
Spc Directors
Facts and Figures
Services
ِActivities
Exhibitions
Print Exhibition
Books Exhibition
Visits
Training
Workshops
Courses
Seminars
Conventions
Celebrations
Research
Favorite Links
Contact Us
PhotoAlbum
Contact Us
Researches
عربي
English
About
Admission
Academic
Research and Innovations
University Life
E-Services
Search
Scientific Publishing Center
Document Details
Document Type
:
Article In Journal
Document Title
:
Thermal Study of Gallium Nitride - Metal Contact
دراسة حرارية لشريحة من مادة نتريد الجاليوم الملتصقة بمعدن
Subject
:
Physics
Document Language
:
English
Abstract
:
GaN films are prepared by MOCVD method on a sapphire substrate. The sample is n-type an semiconductor of 0.5 µm thickness and carriers concentration 2.2 × 1019cm–3 .Metal contacts are prepared by evaporation of metals on GaN films. I-V characteristics are carried out under vacuum in the temperature rang from 90 to 300 K. There is a departure from the nonlinear behavior of the current to a linear one as temperature increases due to the sample series resistance. The saturation current is found to be 8.3 × 10–7 A at room temperature; then, it increases with temperature. At room temperature, the barrier height at zero- bias and the flat band barrier height are calculated at different temperature and they are found to be 0.66 eV and 0.86 eV, respectively. Moreover, the ideality factor has been calculated at different temperature; it, increases with decreasing temperature and it is equal to 1.26 at room temperature. The serial resistant is found to be to 64 Ω at room temperature.
ISSN
:
1012-1319
Journal Name
:
Science Journal
Volume
:
21
Issue Number
:
2
Publishing Year
:
1430 AH
2009 AD
Article Type
:
Article
Added Date
:
Monday, November 16, 2009
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
سعيد سعد الأمير
Al-Ameer, Saeed S.
Researcher
Doctorate
ssaameer@yahoo.com
Files
File Name
Type
Description
24468.pdf
pdf
Back To Researches Page